成果報告書詳細
管理番号20100000001160
タイトル*平成21年度中間年報 次世代高効率ネットワークデバイス技術開発(5)
公開日2010/11/10
報告書年度2009 - 2009
委託先名技術研究組合光電子融合基盤技術研究所
プロジェクト番号P07012
部署名電子・情報技術開発部
和文要約和文要約等以下本編抜粋:1.研究開発の内容及び成果等 【高速多重・分離回路技術】 高速多重・分離回路技術に関しては、光NICに搭載すること目指した上で高速性(40Gbps)と従来の1/3以下となる消費電力<4Wを実現する事を最終目標として進めている。H21年度は、H20年度に試作した部分回路と市販光デバイスを接続した動作確認用ボードをECOC-2009国際会議で展示した。多重・分離化路については、40Gイーサネットシリアル回路、20Gbpsインタフェース回路を追加した全体試作を行い、試作回路の評価の結果、40Gbpsの多重・分離回路動作と消費電力3.3W(1.8W@多重回路、1.5W@分離回路)を確認し、中間目標を実現した。
英文要約Title: Development of Next-generation High-efficiency Network Device Technology
(FY2007-2011) FY2009 Annual Report
(1)High speed multiplexer and demultiplexer circuit technology: We made the ICs including whole function, adding to the 40G Ethernet serial and 20Gbps interface circuits. And we obtained 40Gbps multiple and demultiple operations and 3.3 W of power consumption.
(2) Analogue front-ends for ultra-high speed optical receivers: A compact 100 Gbps receiver module was fabricated on a 15 mm x 15 mm ceramic package. The inter-channel cross talk was measured to be as low as less than 1dB in spite of such a dense integration with -8 dBm receiver sensitivity.
(3)Optical Transmitter Driver: We have developed and evaluated first prototype of 90nm-CMOS 4-channel direct modulation LD Driver. Furthermore, we have developed second prototype of LD Driver, which is high-speed operation (25Gbps) and low power consumption (10mw/Gbps).
(4)LAN/WAN high capacity signal conversion technology: A 40 Gbps LAN-WAN signal conversion circuit TEG was evaluated. We measured a power consumption of the signal conversion circuit at 40 Gbps OTN basic transponder mode, when a 40G-POS signal is used as a LAN-side signal. We confirmed the measured value less than 10 w.
(5)Ultra-high speed, low-power-consumption surface-emitting lasers: The uncooled 25-Gbit/s direct modulation of a 1.3-μm horizontal-cavity surface-emitting laser was demonstrated. A fabricated laser, which has a short cavity (150 μm in length), exhibited the world first 25-Gbit/s eye openings up to 100-℃.
(6)High-speed lasers for direct modulation: For the AlGaInAs laser technology, 40-Gbps direct-modulation under a low driving current below 50 mA at room temperature was achieved in both 1.3 and 1.55-μm-wavelength lasers. As for the quantum-dot laser technology, 25-Gbps high-speed operation at room temperature was realized.
(7) High-responsivity optical receiver modules: We fabricated a back-illuminated p-i-n photodiode with a high reflective reflector and an integrated microlens. The measured 3dB-down bandwidth was 35GHz and the responsivity was 0.8 A/W for 1.3 μm .
(8)Compact and low-power consumption wavelength tunable lasers: We have newly developed a hybrid integration scheme of compound semiconductor chip on silicon PLC with highly optical coupling and no extra reflection, fabricated wavelength tunable light source integrated into a small chip and compact module installed the chip.
(9)Highly efficient semiconductor optical amplifiers: We investigated an active layer structure of the QD-SOA with high efficiency to obtain penalty-free amplification of signals modulated in the 40 Gbps NRZ format at 50°C.
(10) Wavelength converter with wide dynamic range: We design and fabricate a wavelength converter integrated with a SOA at its input signal port. The SOA works as an amplifier and a VOA so that a wavelength converted output signal maintains good signal quality over 14dB range of the input signal power.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る