成果報告書詳細
管理番号20100000001876
タイトル*平成21年度中間年報 次世代半導体材料・プロセス基盤技術の開発 次世代半導体材料・プロセス基盤(MIRAI)プロジェクト(一般会計) 新構造極限CMOSトランジスタ関連技術開発(通常予算分) 1
公開日2011/1/25
報告書年度2009 - 2009
委託先名株式会社東芝
プロジェクト番号P01014
部署名電子・情報技術開発部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等 (i)高移動度チャネル材料用メタルソースドレインの開発 昨年度に引き続き、低抵抗な金属・半導体コンタクト技術の確立していないn型Geチャネルトランジスターに対して、メタルソース・ドレイン技術の開発を行った。具体的には、NiGeとGeとの間に高濃度にPが偏析した、いわゆる不純物偏析ショットキー接合を様々な条件で試作し、その電気特性や、構造評価、P濃度分布評価を行った。
英文要約Title: Next Generation Semiconductor Materials and Process Platform (MIRAI) Project: Ultra-scaled CMOS (FY2008-FY2010) FY2009 Annual Report
1. Development of metal source/drain for high-mobility channel materials: NiGe/Ge Schottky contacts on n/p-Ge substrates were investigated in which phosphor (P) atoms were segregated around the NiGe/Ge interfaces. Ohmic contacts were obtained for the NiGe contacts with high density of localized P atoms around the interface, suggesting the Schottky barrier lowering due to the P segregation. Also, suppression of P diffusion in Ge substrates and NiSi formation on Si-fin sidewalls were demonstrated.: 2. Development of mobility-enhancement technology by strain control: Strained-Si gate-all around (GAA) nMOSFETs having short channels down to ~50 nm were fabricated. Higher drive current were observed than in unstrained GAA-nMOSFETs due to the electron mobility enhancement under the tensile strain. : A comprehensive study was carried out for electron mobility and band-gap energy in Ge under various biaxial and uniaxial strain configurations. It was found that the uniaxial strain along [110] directions is most preferable in terms of high mobility and wider band gap energy. SiGe stressor structures were fabricated on Ge substrates to realize such strain in a Ge-MISFET channel.: 3. Development of scattering reduction technology for carriers in high mobility channels by controlling the surfaces and the interfaces: Ge-pMISFETs having a high-k gate stack with a strontium germanide (SrGe) interlayer were fabricated. A highest hole mobility ever reported for that in high-k/Ge MISFETs was obtained. The equivalent oxide thickness (EOT) of 1.1 nm was obtained with the reasonably low gate leakage current.: 4. Fabrication of short-channel transistors with high electrostatic controllability by the gate electrode: SiGe stressors were epitaxially grown on the sidewalls of SOI-Fin structures using 300 mm facility of Toshiba Corporation. Compressive strain was observed in the central portion of the fin. A hydrogen annealing at a high temperature was also examined to the fins. Smoothing effect and thinning of the fins were observed after the treatment.
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