成果報告書詳細
管理番号20100000002280
タイトル*平成21年度中間年報 省エネルギー革新技術開発事業/先導研究/ナノ積層型高熱伝導膜によるホットスポットフリーLSIの研究開発
公開日2011/1/25
報告書年度2009 - 2009
委託先名独立行政法人産業技術総合研究所
プロジェクト番号P09015
部署名省エネルギー技術開発部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等
(1)高熱伝導多層膜の組み込みによるホットスポット放熱性向上効果の検討
本研究開発ではナノオーダ積層技術により高熱伝導多層膜を半導体LSIデバイス上に直接形成することで、デバイス発熱部から放熱部までの熱抵抗を低減し、ホットスポットを含むデバイス動作温度の低温化とそれによるトランジスタリーク電流ロスの低減を実現することを目標としている。具体的には図1に示すように高熱伝導多層膜の特性を効率良く利用する熱流路を考えて、チップ内、ならびに外部インターポーザ内へ多層膜を形成することにより、トランジスタ領域から発生する熱を効率よく外部に放出し、ホットスポット低減を図る。
英文要約Title:Research and Development of hot spot free technology in LSI device
using High Thermal conductive nano multilayered Film (FY2009-FY2010) FY2009 Annual Report
This research and development target is to drastically cut down a leak-current loss of transistor. In order to reduce the leak-current loss of transistor, the transistor operating temperature has to be decreased, it means the hot spot has to be reduced. The device operating temperature can decrease by reducing a thermal resistance of semiconductor LSI device that is obtained by formed direct deposition to the device of a high temperature conduction nano multilayer-film technology. Specifically, by designing the most effective layout of the multilayer-film and the thermal-vias, the film and vias formed in the LSI chip and interposer can spread efficiently the heat generated by the transistor. Then we can obtain the hot spot free LSIs and achieve the reduction of the leak-current.
In order to evaluate effects of hot spot reduction, a chip that is "a test device of hot spot evaluation" was designed and its fabrication process was developed. The test chip was designed as micro resistance heater that is simulated as hot spot. This micro heater can generate heat of 0.3 W/mm2.
There are some models for transistor heat spreading, so we tried three types of fabrication technique for multilayer-films and its substrate Si wafer. One was processing via-holes to only Si wafer. This type vias will be used for heat transfer from topside to backside. Second one was processing some patterns to only multilayer-films. This type processing technique will be applied for heat transfer circuit. And last one was processing through-holes both of multilayer-films and Si wafer. We will be able to efficiently transfer the generated heat from hot spot to heat spreader using these technologies.
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