成果報告書詳細
管理番号20110000000789
タイトル*平成22年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(ソーラーグレード原料シリコンの分析評価に関わる研究開発)
公開日2011/6/29
報告書年度2010 - 2010
委託先名新日本ソーラーシリコン株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1. 研究開発の内容及び成果等
1.1. 研究開発の内容
NEDOが目標とする2020年における太陽光発電コスト14円/kWhを達成するためには全ての太陽電池製造プロセスにおいてプロセスコストの低減を行わなければならない。太陽光発電システム次世代高性能技術の開発コンソーシアムではAll Japan体制で低コスト・高性能太陽電池の開発を目指すことになる。
本研究開発テーマにおいては太陽電池用原料コストの低減を目指して出発原料となるシリカ(SiO2)および金属シリコンと結晶育成用ポリシリコンを製造するための中間原料である塩化シリコン(SiHCl3およびSiCl4)の評価技術を確立するとともに、様々なサンプルを収集・分析を行い、コンソーシアムで実施する結晶性能評価と組み合わせて太陽電池用原料に要求される極限性状を把握することが目的である。
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (The development for measuring systems concerning PV grade silicon raw materials and intermediate materials.) (FY2010-FY2012) FY2010 Annual Report
The developments of costs reduction and high efficiency PV cell technologies are most important issues in order to achieve the goals along the national policy on photovoltaic power generation.
The technologies decreasing process costs, using low-priced raw materials and maintaining qualities of products are the development tasks in the part of PV polysilicon processes. The Siemens Process is the most common polysilicon process, but the margin of its cost reduction are not so large in the estimation. Therefore some low-cost polysilicon processes instead of the Siemens method
have been proposed and studied recently.
The objective of this study is concerning, the development of measuring techniques for raw materials such as silica and the metallurgical-grade silicon, for intermediate materials such as silicon-chlorides, and for polysilicon products, in order to estimate limitation characteristics between raw/intermediate materials and polysilicon for Photovoltaic Power Generation.
Many of samples, such as starting materials and intermediate materials for polysilicon must be collected and measured in this work. Suitable analyzers which can measure respective charactaristics must be selected for this purpose.
GC-FID/TCD(Gas Chromatography), FIA(Flow Injection Analysis Method), IC(Ion
Chromatography) and ICP-MS(Inductively Coupled Plasma Mass Spectrometry) are effective to measure impurities in these samples. GC-FID/TCD is prepared for the type analysis of methylchlorosilane and other gaseous impurities in the intermediate chlorosilane materials. ICP-MS is useful for the metal impurities analysis in all of starting materials, intermediate materials and produced polysilicon. FIA and IC can measure the concentration of dopant elements. FIA is for the concentration of Boron and IC for the concentration of Phosphorus in the chlorosilane.
During 2011,a small area of clean space was prepared for analyzers, and GC-FID/TCD and ICP-MS analyzer were introduced into our laboratory, and started to obtain parameters to use at these analyzers.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る