成果報告書詳細
管理番号20110000000847
タイトル*平成22年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(次世代ヘテロ接合シリコン結晶太陽電池の接合評価)
公開日2011/6/29
報告書年度2010 - 2010
委託先名国立大学法人岐阜大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約和文要約等以下本編抜粋:1.研究開発の内容及び成果等 (1)研究開発の内容 1)結晶Si太陽電池用の光起電力顕微鏡の開発 a.光起電力顕微鏡用基礎技術の開発 b.結晶Si太陽電池用の光起電力顕微鏡の開発 H25,26で20x20cm2まで測定可能へ 2)ヘテロ接合結晶Si及び多結晶Si太陽電池の作製と光起電力 顕微鏡によるヘテロ接合特性の評価 a.i型a-Si/n(p)型(多)結晶Siの接合界面の特性評価と界面での再結合過程低減方法の探索 b.p(n)型a-Si(a-SiC,a-SiO等)/i型a-Si/n(p)型(多)結晶Siによる複合接合界面の特性評価とi層、p層の作製条件の最適化
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (Research on multiscale evaluation of thin heterojunction film for next genertion high efficiency solar cell by conductive AFM )(FY2010-2012)FY2010, Gifu University
The previous photovoltaic microscopy system couldn’t measure the I-V characteristics with topological and current image at once. However, samples are always moving by the drift effect of measurement system. In this reason, the topological image at the measuring point couldn’t overlap the current image. To improve the performance, the AFM-CITS software was installed on the photovoltaic microscopy system. So, the system can measure simultaneously I-V characteristics of solar cells with topological image and current image. The nano-scale electrical properties of amorphous Si solar cell were investigated by photovoltaic microscopy with AFM-CITS software. We confirmed that the amorphous Si solar cells show that there are interspersed points of large current near grain boundaries in the current images. It indicates that the system is ready to contribute to the measurement in the grain boundary of poly-Si wafer and the improvement of electrical properties. The non-doped metal oxide films were prepared by an electron beam evaporation method. It was found that one of the oxide has p-type conductivity by thermoelectric power. The a-Si solar cells were prepared on the oxide coated TCO (Asahi U-type) by plasma enhanced chemical vapor deposition with higher frequency power source (p- and i-layers) and Hot-wire CVD method (n-layer). The device structure of a-Si solar cells were TCO/ p-type oxide/ p-type a-SiC / i-type a-Si / n-type nc-Si / metal electrode (Al). I~V characteristics of the a-Si solar cell illuminated from p-layer side under AM-1.5 (100 mW/cm2) light source. The open circuit voltage (VOC) of a-Si solar cell was larger than our present cases. Therefore, the presence of this oxide film between TCO and p-type a-SiC layer plays a major role by causing an improvement in the VOC of a-Si solar cells. This high VOC value can be attributed to modification in the current transport in TCO/p-layer of a-Si solar cells and reduction of recombination of photo-generated carriers at the TCO/p-layer interface. We investigated a nano-scale electrical property of poly-Si wafer by the photovoltaic microscopy. We confirmed that the current is increasing at the points of high contrast in topological image. This result is similar to the current map of amorphous Si solar cells. In the next stage, we plan to measure several hetero junctions of poly-Si.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る