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成果報告書詳細
管理番号20180000000165
タイトル*平成29年度中間年報 高輝度・高効率次世代レーザー技術開発 次々世代加工に向けた新規光源・要素技術開発 フォトニック結晶レーザーの短パルス化・短波長化
公開日2018/6/26
報告書年度2017 - 2017
委託先名国立大学法人京都大学 スタンレー電気株式会社
プロジェクト番号P16011
部署名IoT推進部
和文要約
英文要約Title: Development of advanced laser processing with intelligence based on high-brightness and high-efficiency next-generation laser technologies (TACMI project) / Development of photonic crystal lasers toward short pulse and short wavelength operations (FY 2016-2020) FY 2017 Annual Report

Photonic crystal lasers (PCSELs) can achieve single-mode, high-power operation. This research will aim to establish the fundamental techniques for (a) short-pulse (sub-nanosecond pulse width, watt-class average power) and (b) short-wavelength (blue/violet) operation in PCSELs. The following are the results obtained in this fiscal year.

(a) Short-pulse PCSELs
We proposed PCSELs with multiple electrodes for short pulse operation with sub-nanosecond pulse widths and watt-class average power. In this system, it is expected that self-pulsation can be induced and short pulses can be obtained by injecting DC current onto a center electrode (gain region) and applying inverse DC bias onto an edge electrode (absorption region). In this fiscal year, we design photonic crystal and electrode structures by using time-resolved coupled-wave equations including both photon and carrier distributions, and successfully found a PCSEL design which can achieve self-pulsation with pulse width of 10 ps, peak power of 30 W and averaged power of 1W. In addition to these theoretical investigations, we also fabricated PCSELs with multiple electrodes and achieved self-pulsation with pulse width of ー100 ps and peak power of >0.5 W

(b) Short-wavelength PCSEL
We proposed GaN-based PCSELs in order to realize short (blue/violet) wavelength operation. In order to fabricate GaN-based PCSELs, the photonic crystal structure needs to be embedded into the GaN layers. In this fiscal year, we investigated GaN-based PCSEL design for low threshold current operations, including the photonic crystal structure and the distance between the MQW and photonic crystal. In addition, we have started fabrication of GaN-based PCSEL, and carried out the measurement of photonic band structure. From the band structure, we estimated the 1D coupling coefficient of 375 cm-1 and 2D coupling coefficient of 88 cm-1. From the estimated values, low threshold operation is expected. Moreover, we have set up a new MOCVD system in Kyoto University, where equipment for research of PCSEL is developed, and confirmed good MQW is successfully fabricated.
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