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成果報告書詳細
管理番号20180000000175
タイトル*平成29年度中間年報 IoT推進のための横断技術開発プロジェクト 超低消費電力データ収集システムの研究開発1(株式会社東芝)
公開日2018/6/2
報告書年度2017 - 2017
委託先名株式会社東芝
プロジェクト番号P16007
部署名IoT推進部
和文要約
英文要約Title: Project to develop cross-sectoral technologies for IoT promotion
/Development of Ultra Low Power Data Collection Systems (FY2016-2018) FY2017 Annual Report

1-(1) Development of SiGe film deposition and processes for MEMS on CMOS
A sensor operation verification was carried out by combining a MEMS sensor using a poly-SiGe film and a CMOS detection circuit. We are working on the fabrication process for poly-SiGe film MEMS fabrication and developed sealing technology compatible with CMOS mixed device.

1-(2) Development of high quality SiGe films
Machine reliability survey of SiGe film was advanced by semi-static tensile test using machine reliability test system. In comparison with SiGe and Si materials, short-term resonance fracture test was conducted in which the deformation amplitude angle of the transducer was continuously increased in a short time in addition to the fatigue test.

2-(1) Development of ULP gyro sensor
Following the 1-axis prototype results in FY2016, we designed and fabricated a 3-axis MEMS gyro sensor. Toward the implementation of wafer-level vacuum package for the 3-axis gyro device described above, we reviewed and selected a new MEMS process and foundry.

2-(3) Development of combo sensors technology for MEMS sensors
Development of vibration type magnetic sensor, designing and prototyping a magnetic sensor for detecting the in-chip magnetic field, and experimentally demonstrating that the magnetic field of the terrestrial magnetism level can be detected. And we have established a method to optimize the design of the acceleration sensor adaptive to CMOS mixed loading by combining the spring size when the sensor size is specified, and the numerical and analytic method for both the SOI structure and the CMOS structure. To realize infrared sensor with SiGe thermopile, TEG was designed and trial made. Simulation of capacitive type MEMS pressure sensor was carried out for two kinds, high sensitivity gauge pressure sensor around atmospheric pressure and absolute pressure sensor from vacuum to over atmospheric pressure.

3-(1) ULP gyro sensor circuit technology development
We have developed a circuit technology suitable for low power consumption MEMS vibration type gyroscope featuring intermittent drive by catch & release method. Based on the circuit designed in FY2016, layout design and chip trial manufacture were done.

3-(2) Programmable ULP AFE design for sensors
We started to prepare for chip fabrication of ULP capacitive sensor AFE that we have designed in 2016, and we obtained prototype chips in July 2017. Measurement results of the prototype chips show the power consumption of 143nW at 25Hz signal bandwidth with 65dB SNR, and this means the achievement of less than 10nJ energy calculated by power/bandwidth.

3-(3) Frequency-Domain Ultra-Low-Power Multi-MEMS Sensor Interface Circuit
We designed a sensor circuit (SNR> 50 dB) aimed at power consumption of about 1/1000 of conventional products with a standard CMOS process.
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