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成果報告書詳細
管理番号20180000000180
タイトル*平成29年度中間年報 高輝度・高効率次世代レーザー技術開発 次々世代加工に向けた新規光源・要素技術開発 高出力・高ビーム品質動作を可能とする新型面発光レーザーの研究開発
公開日2018/6/26
報告書年度2017 - 2017
委託先名国立大学法人東京工業大学 富士ゼロックス株式会社
プロジェクト番号P16011
部署名IoT推進部
和文要約
英文要約Title: Development of advanced laser processing with Intelligence based on high-brightness and high-efficiency next-generation laser technologies (TACMI project) / Development of novel surface emitting semiconductor lasers enabling high power and high beam quality operations (FY2016-FY2020) FY2017 Annual Report

Vertical cavity surface emitting lasers (VCSELs) can offer large-scale 2D arrays with potentially high power, but the beam quality of incoherent arrays is not good enough. The purpose of this project is to develop a novel VCSEL source consisting of a single-mode seed VCSEL and large area VCSEL amplifier for high output power operations for high power and high beam quality operations. In addition, we will develop highly efficient and large scale VCSEL arrays and investigate their beam quality. We involve the following two sub-tasks: (a) Development of high-power VCSELs and (b) Development of highly efficient & large scale arrays and related technologies.
(a) Development of high-power VCSELs: In the novel VCSEL amplifier, slow light travels with slow group velocity in the lateral direction. When VCSEL lasing mode is suppressed completely, the output power of slow light mode reaches watt-class high powers. We fabricated mm-long VCSEL amplifiers, exhibiting an output power of 1.2W and a narrow divergence angle of below 0.04・ We confirmed the scaling low so that the output power can be increased in proportional to the device length. An ultra-high power and diffraction-limited high-beam qualities can be expected simultaneously for new schemes of direct semiconductor laser processing. An efficient way to increase the output power is to make a long device with two-dimensional layout, because the waveguide with is only a few tens of microns. We proposed and demonstrated a compact VCSEL amplifier with a folded waveguide layout. Light propagation and amplification are realized in all 8 arms of the waveguide. By increasing the folded waveguide element number and injection current, much larger power is expected. Also, the seed light source (single-mode VCSEL) can be integrated in the same chip. This demonstration shows a prospective approach in realizing a compact and high-power semiconductor laser amplifier for use in laser manufacturing applications.
(b) Development of highly efficient & large scale arrays and related technologies: In this sub-task, we introduced the measurement setup for high power VCSEL arrays and carried out 3-inch full wafer fabrication of 850nm VCSEL amplifiers, including a new epi-wafer design of low thermal resistance. We realized a CW output power of 0.47 W, 1.2 W and 2.3 W for VCSEL amplifiers with an amplifier length of 2 mm, 6 mm and 10 mm, respectively. The resul shows the scaling beyond 10W output with increasing the length over 10 mm. By increasing the device length and injection current, output power can be further enhanced. A potential of high power VCSEL amplifiers by extending the device length in cm range is suggested.
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