本文へジャンプ

成果報告書詳細
管理番号20180000000183
タイトル*平成29年度中間年報 IoT推進のための横断技術開発プロジェクト 超低消費電力データ収集システムの研究開発8(国立大学法人東京大学 生産技術研究所)
公開日2018/6/2
報告書年度2017 - 2017
委託先名国立大学法人東京大学生産技術研究所
プロジェクト番号P16007
部署名IoT推進部
和文要約
英文要約Title: Project to Develop Cross-Sectoral Technologies for IoT Promotion / Development of Ultra Low Power Data Collection Systems 8 (FY2016-FY2018) FY2017 Annual Report

For ultra-low power sensor nodes relying on energy harvesting power supply, non-volatile memory function is mandatory, considering the possibility of power loss for unpredictable period of time. Non-volatile SRAM (NV-SRAM) using Hafnium-based ferroelectric capacitors is a possible solution to this problem. The purpose of this study is to elucidate the possibility and usefulness of Hafnium-based NV-SRAM, primarily using circuit simulations, combined with experimental data. To design scaled NV-SRAMs, variation-aware design methodology is necessary, as is for normal SRAMs. Therefore, a new statistical algorithm for obtaining NV-SRAM noise margin based on only pass/fail simulation results has been established. Using this method, it was found that stable 65nm NV-SRAM with sufficiently small capacitor can be designed. Systematic survey of various design options, such as signal control sequence and capacitor size, was also performed, and a guideline for NV-SRAM design has been revealed.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る