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成果報告書詳細
管理番号20180000000185
タイトル*平成29年度中間年報 高輝度・高効率次世代レーザー技術開発 次々世代加工に向けた新規光源・要素技術開発 高効率・高出力量子ドットレーザーの研究開発
公開日2018/6/26
報告書年度2017 - 2017
委託先名国立大学法人東京大学 三菱電機株式会社
プロジェクト番号P16011
部署名IoT推進部
和文要約
英文要約Title: Development of advanced laser processing with intelligence based on high-brightness and high-efficiency next-generation laser technologies (TACMI project) / Development of high-efficiency and high-power quantum-dot lasers (FY2016-FY2020) FY2017 Annual Report

We are aiming the realization of high-power quantum-dot (QD) lasers with high efficiency. For the purpose, we will pursue the crystal growth technology for high-quality and high-density QDs and will design a QD laser suitable for high power operation as well. Moreover, we will develop other important component technologies enabling the QD lasers to laser processing applications. This year, we obtained the following achievement on these subjects.

We optimized the growth conditions for InGaAs QDs, which will be used as gain media for the targeted QD lasers, and successfully increased the areal-density of QDs. First, we controlled a material deposition rate for 1.15 μm InGaAs QDs, and achieved in-plane density up to 1.1 × 10^11 cm^-2. Based on this result, by additional optimizing the growth temperature of the QDs and the barrier layer, the world's highest in-plane density as 1.05 μm high quality QDs (1.7 × 10^11 cm^-2) was achieved. In device level, we fabricated prototype for the optimization of the laser device structure (QD layer number, device length, clad layer material). In addition, we tried to prototyping 16 laser array structure. For device implementation, we have designed a cooling package for QD laser arrays with multiple light emitting points. And we also studied an external optical system that coaxially couples oscillating beams of multiple light emitting points. In addition, necessary element technologies were established using commercially available quantum well lasers.
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