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成果報告書詳細
管理番号20190000000200
タイトル*平成30年度中間年報 エネルギー・環境新技術先導プログラム 未踏チャレンジ2050 磁気―熱―電気間相互作用の体系的解明と新原理デバイスの開発
公開日2019/5/14
報告書年度2018 - 2018
委託先名国立研究開発法人産業技術総合研究所 国立研究開発法人物質・材料研究機構
プロジェクト番号P14004
部署名イノベーション推進部
和文要約
英文要約Title: Advanced Research Program for Energy and Environmental Technologies / Mitou challenge 2050 / Systematic elucidation of the magneto-thermo-electric interaction and development of novel mechanism device, FY2018 Annual Report

In the research subject (A), focusing on the normal thermomagnetic effect, the measurement system of thermoelectric properties under the magnetic field was developed following last fiscal year. Electrical wiring inside the cryostat for the measurement was reworked to reduce noise comes from the vibration of the cooler. The automatically measurement system of the magnetoresistance, Hall coefficient, magneto-Seebeck coefficient, Nernst effect and magnetic field dependence of the thermal conductivity in the temperature range from 4.2 K to 300 K was established. Subsequently, a calculation model that reproduces the thermomagnetic properties of the experimental result of bismuth was established from the Boltzmann equation for the understanding of the magneto-thermo-electric interaction. Based on the established theoretical calculations, material design strategy to improve performance of the thermomagnetic effect have been established. It is suggested that the performance can be improved by suppressing the magnetoresistance effect by carrier doping, while improving the magnetic Seebeck effect. Therefore, the effect of carrier doping on the thermomagnetic effect was evaluated by using Bi-Sb alloy with Te as electron doping and Sn as hole doping. Further, a Nernst type thermoelectric module is developed and evaluated its properties to clarify technical problems. The module is demonstrated and evaluated by a thermoelectric property measurement system equipped with the superconducting coil which can generate the magnetic field up to 5 T.

In the research subject (B), we are focusing on the anomalous Nernst effect (ANE) for developing a heat current sensor having high flexibility and sensitivity and low heat resistance. New materials having large thermopower of ANE and low magentizations were a target of material development. The Fe-Ga thin films having the different Fe:Ga compostion ratio have been fabaricated. The highest ANE of 2.9?V/K and relatively low magnetizaiton of 440 emu/cc have been realized in Fe66Ga34. The Mn-Ga films having D022 structure have been also grown on a MgO substate. The negative sign of thermopower of -0.6?V/K and small magnetization of 200-300emu/cc were obtained. We also fabaricated the heat current sensors using Fe-Al developped in this project in last fiscal year.We deposited 500 nm FeAl on the Si substate and patterned it into 100?m-width 25 wires and connected them serially by Au wires. As a result of the evaluation of heat sensing, we found a relatively high sensitivity as a heat current sensor, 0.051?V/(W/cm2), which is 8 times larger than the heat current sensor we developped last fiscal year. We successfully fabaricated the similar sensor structure on 5mm-thick Kapton sheet which must have about 1/500 smaller heat resistance than the present commercial Seebeck heat current sensor.
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